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Electrically active defects induced by hydrogen and helium implantations in Ge
Electrically active defects induced by hydrogen and helium implantations in Ge
Electrically active defects induced by hydrogen and helium implantations in Ge
Markevich, V.P. (Autor:in) / Bernardini, S. (Autor:in) / Hawkins, I.D. (Autor:in) / Peaker, A.R. (Autor:in) / Kolkovsky, V. (Autor:in) / Larsen, A.N. (Autor:in) / Dobaczewski, L. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 354-359
01.01.2008
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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