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SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
Attolini, G. (Autor:in) / Bosi, M. (Autor:in) / Rossi, F. (Autor:in) / Watts, B.E. (Autor:in) / Salviati, G. (Autor:in) / Battistig, G. (Autor:in) / Dobos, L. (Autor:in) / Pecz, B. (Autor:in) / Bauer, A.J. / Friedrichs, P.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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