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SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
SiC Epitaxial Growth on Si(100) Substrates Using Carbon Tetrabromide
Attolini, G. (author) / Bosi, M. (author) / Rossi, F. (author) / Watts, B.E. (author) / Salviati, G. (author) / Battistig, G. (author) / Dobos, L. (author) / Pecz, B. (author) / Bauer, A.J. / Friedrichs, P.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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