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Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature
Gammon, P.M. (Autor:in) / Perez-Tomas, A. (Autor:in) / Jennings, M.R. (Autor:in) / Roberts, G.J. (Autor:in) / Shah, V.A. (Autor:in) / Covington, J.A. (Autor:in) / Mawby, P.A. (Autor:in) / Bauer, A.J. / Friedrichs, P. / Krieger, M.
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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