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Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature

Gammon, P.M. / Perez-Tomas, A. / Jennings, M.R. / Roberts, G.J. / Shah, V.A. / Covington, J.A. / Mawby, P.A.

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Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature

Gammon, P.M. / Perez-Tomas, A. / Jennings, M.R. / Roberts, G.J. / Shah, V.A. / Covington, J.A. / Mawby, P.A.

Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature

Gammon, P.M. / Perez-Tomas, A. / Jennings, M.R. / Roberts, G.J. / Shah, V.A. / Covington, J.A. / Mawby, P.A.

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Title:

Germanium - Silicon Carbide Heterojunction Diodes - A Study in Device Characteristics with Increasing Layer Thickness and Deposition Temperature

Contributors:

Gammon, P.M. (author) / Perez-Tomas, A. (author) / Jennings, M.R. (author) / Roberts, G.J. (author) / Shah, V.A. (author) / Covington, J.A. (author) / Mawby, P.A. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Published in:

Silicon Carbide and Related Materials 2009 ; 889-892

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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