Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Abdellaoui, T. (Autor:in) / Daoudi, M. (Autor:in) / Bardaoui, A. (Autor:in) / Chtourou, R. (Autor:in)
APPLIED SURFACE SCIENCE ; 256 ; 5946-5951
01.01.2010
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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