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Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Study of n^+ type porous GaAs by photoluminescence spectroscopy: Effect of the etching time on the deep levels
Abdellaoui, T. (author) / Daoudi, M. (author) / Bardaoui, A. (author) / Chtourou, R. (author)
APPLIED SURFACE SCIENCE ; 256 ; 5946-5951
2010-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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