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Electronic confinement in self-assembled quantum dots (SAQD) modeled with a new interfacial capping layer
Electronic confinement in self-assembled quantum dots (SAQD) modeled with a new interfacial capping layer
Electronic confinement in self-assembled quantum dots (SAQD) modeled with a new interfacial capping layer
Lam, A. W. (Autor:in) / Ng, T. Y. (Autor:in)
COMPUTATIONAL MATERIALS SCIENCE ; 49 ; S54-S59
01.01.2010
S54-S59
Aufsatz (Zeitschrift)
Englisch
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