Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin
Yang, J. H. (Autor:in) / Degawa, M. (Autor:in) / Song, K. S. (Autor:in) / Wang, C. (Autor:in) / Kawarada, H. (Autor:in)
MATERIALS LETTERS ; 64 ; 2321-2324
01.01.2010
4 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
High-Performance Surface-Channel Diamond Field-Effect Transistors
British Library Online Contents | 2001
|Fabrication of Si1-xGex alloy nanowire FETs
IEEE | 2006
|British Library Online Contents | 2017
|British Library Online Contents | 2017
|British Library Online Contents | 2003