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Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Fujiwara, H. (Autor:in) / Konishi, M. (Autor:in) / Ohnishi, T. (Autor:in) / Nakamura, T. (Autor:in) / Hamada, K. (Autor:in) / Katsuno, T. (Autor:in) / Watanabe, Y. (Autor:in) / Endo, T. (Autor:in) / Yamamoto, T. (Autor:in) / Tsuruta, K. (Autor:in)
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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