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Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density
Fujiwara, H. (author) / Konishi, M. (author) / Ohnishi, T. (author) / Nakamura, T. (author) / Hamada, K. (author) / Katsuno, T. (author) / Watanabe, Y. (author) / Endo, T. (author) / Yamamoto, T. (author) / Tsuruta, K. (author)
2011-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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