Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm: Fid-Bau Portal

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Gao, Y. / Xu, B. / Wang, Z. / Gong, X. / Fang, W.

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Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Gao, Y. / Xu, B. / Wang, Z. / Gong, X. / Fang, W.

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Gao, Y. / Xu, B. / Wang, Z. / Gong, X. / Fang, W.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

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Dokumentinformationen

Titel:

Characteristics of n-InAs/p-InAsSb heterojunctions with a cutoff wavelength of 4.8 μm

Beteiligte:

Gao, Y. (Autor:in) / Xu, B. (Autor:in) / Wang, Z. (Autor:in) / Gong, X. (Autor:in) / Fang, W. (Autor:in)

Erschienen in:

RARE METALS -BEIJING- ENGLISH EDITION ; 30 ; 267-269

Erscheinungsdatum:

01.01.2011

Format / Umfang:

3 pages

ISSN:

1001-0521

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 669

Gao, Y. / Gong, X. / Fang, W. et al. | British Library Online Contents | 2009

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Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

Ning, Zhen-Dong / Liu, Shu-Man / Luo, Shuai et al. | British Library Online Contents | 2016

Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

Ning, Z. D. / Liu, S. M. / Luo, S. et al. | British Library Online Contents | 2016

Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

Ning, Zhen-Dong / Liu, Shu-Man / Luo, Shuai et al. | British Library Online Contents | 2016

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