Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy: Fid-Bau Portal

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Gao, Y. / Gong, X. / Fang, W. / Akihiro, I.

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Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Gao, Y. / Gong, X. / Fang, W. / Akihiro, I.

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Gao, Y. / Gong, X. / Fang, W. / Akihiro, I.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Titel:

Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy

Beteiligte:

Gao, Y. (Autor:in) / Gong, X. (Autor:in) / Fang, W. (Autor:in) / Akihiro, I. (Autor:in)

Erschienen in:

RARE METALS -BEIJING- ENGLISH EDITION ; 28 ; 313-316

Erscheinungsdatum:

01.01.2009

Format / Umfang:

4 pages

ISSN:

1001-0521

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 669

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