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The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy
APPLIED SURFACE SCIENCE ; 257 ; 8846-8849
01.01.2011
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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