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The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

Tang, J. / Liang, T. / Shi, W. / Zhang, Q. / Wang, Y. / Liu, J. / Xiong, J.

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The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

Tang, J. / Liang, T. / Shi, W. / Zhang, Q. / Wang, Y. / Liu, J. / Xiong, J.

The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

Tang, J. / Liang, T. / Shi, W. / Zhang, Q. / Wang, Y. / Liu, J. / Xiong, J.

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Check availability in my library

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Document information

Title:

The testing of stress-sensitivity in heteroepitaxy GaN/Si by Raman spectroscopy

Contributors:

Tang, J. (author) / Liang, T. (author) / Shi, W. (author) / Zhang, Q. (author) / Wang, Y. (author) / Liu, J. (author) / Xiong, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 8846-8849

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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