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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
Strenger, C. (Autor:in) / Haublein, V. (Autor:in) / Erlbacher, T. (Autor:in) / Bauer, A.J. (Autor:in) / Ryssel, H. (Autor:in) / Beltran, A.M. (Autor:in) / Schamm-Chardon, S. (Autor:in) / Mortet, V. (Autor:in) / Bedel-Pereira, E. (Autor:in) / Lefebvre, M. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 437-440
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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