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Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
Fujiwara, H. (Autor:in) / Katsuno, T. (Autor:in) / Ishikawa, T. (Autor:in) / Naruoka, H. (Autor:in) / Konishi, M. (Autor:in) / Endo, T. (Autor:in) / Watanabe, Y. (Autor:in) / Tsuruta, K. (Autor:in) / Onda, S. (Autor:in) / Adachi, A. (Autor:in)
MATERIALS SCIENCE FORUM ; 717/720 ; 911-916
01.01.2012
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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