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High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
Shekari, L. (Autor:in) / Ramizy, A. (Autor:in) / Omar, K. (Autor:in) / Hassan, H. A. (Autor:in) / Hassan, Z. (Autor:in)
APPLIED SURFACE SCIENCE ; 263 ; 50-53
01.01.2012
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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