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High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Shekari, L. / Ramizy, A. / Omar, K. / Hassan, H. A. / Hassan, Z.

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High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Shekari, L. / Ramizy, A. / Omar, K. / Hassan, H. A. / Hassan, Z.

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Shekari, L. / Ramizy, A. / Omar, K. / Hassan, H. A. / Hassan, Z.

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Order at Subito €

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Document information

Title:

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Contributors:

Shekari, L. (author) / Ramizy, A. (author) / Omar, K. (author) / Hassan, H. A. (author) / Hassan, Z. (author)

Published in:

APPLIED SURFACE SCIENCE ; 263 ; 50-53

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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