AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering: Fid-Bau Portal

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

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AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

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Titel:

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Beteiligte:

Kuang, X. P. (Autor:in) / Zhang, H. Y. (Autor:in) / Wang, G. G. (Autor:in) / Cui, L. (Autor:in) / Zhu, C. (Autor:in) / Jin, L. (Autor:in) / Sun, R. (Autor:in) / Han, J. C. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 263 ; 62-68

Erscheinungsdatum:

01.01.2012

Format / Umfang:

7 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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