AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering: Fid-Bau Portal

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

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AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Kuang, X. P. / Zhang, H. Y. / Wang, G. G. / Cui, L. / Zhu, C. / Jin, L. / Sun, R. / Han, J. C.

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Document information

Title:

AlN films prepared on 6H-SiC substrates under various sputtering pressures by RF reactive magnetron sputtering

Contributors:

Kuang, X. P. (author) / Zhang, H. Y. (author) / Wang, G. G. (author) / Cui, L. (author) / Zhu, C. (author) / Jin, L. (author) / Sun, R. (author) / Han, J. C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 263 ; 62-68

Publication date:

2012-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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