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Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
Miyasaka, A. (Autor:in) / Norimatsu, J. (Autor:in) / Fukada, K. (Autor:in) / Tajima, Y. (Autor:in) / Muto, D. (Autor:in) / Kimura, Y. (Autor:in) / Odawara, M. (Autor:in) / Okano, T. (Autor:in) / Momose, K. (Autor:in) / Osawa, Y. (Autor:in)
01.01.2013
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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