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Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect
Ishida, Y. (Autor:in) / Yoshida, S. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H. / Funaki, T.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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British Library Online Contents | 2014
|Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
British Library Online Contents | 2010
|Step bunching during the epitaxial growth of a generic binary-compound thin film
British Library Online Contents | 2010
|Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
British Library Online Contents | 2009
|Step-Bunching Free and 30 μm-Thick SiC Epitaxial Layer Growth on 150 mm SiC Substrate
British Library Online Contents | 2013
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