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Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
Tugluoglu, N. (Autor:in) / Yuksel, O. F. (Autor:in) / Karadeniz, S. (Autor:in) / Safak, H. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 16 ; 786-791
01.01.2013
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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