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Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers
Leung, B. H. (Autor:in) / Fong, W. K. (Autor:in) / Surya, C. (Autor:in) / Lu, L. W. (Autor:in) / Ge, W. K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 523-525
01.01.2003
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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