Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)- Silicon Prepared by Vacuum Directional Solidification: Fid-Bau Portal

Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)- Silicon Prepared by Vacuum Directional Solidification

Ma, W.H. / Jiang, Y. / Zhou, Y. / Wei, K.X. / Yang, B. / Dai, Y.N. / Morita, K.

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Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)- Silicon Prepared by Vacuum Directional Solidification

Ma, W.H. / Jiang, Y. / Zhou, Y. / Wei, K.X. / Yang, B. / Dai, Y.N. / Morita, K.

Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)- Silicon Prepared by Vacuum Directional Solidification

Ma, W.H. / Jiang, Y. / Zhou, Y. / Wei, K.X. / Yang, B. / Dai, Y.N. / Morita, K.

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Titel:

Effect of Withdrawal Rate on Defects of Upgraded Metallurgical Grade (UMG)- Silicon Prepared by Vacuum Directional Solidification

Beteiligte:

Ma, W.H. (Autor:in) / Jiang, Y. (Autor:in) / Zhou, Y. (Autor:in) / Wei, K.X. (Autor:in) / Yang, B. (Autor:in) / Dai, Y.N. (Autor:in) / Morita, K. (Autor:in) / Zhu, S. / Ni, B. / Ju, D.

Erschienen in:

Advanced Materials Science and Technology ; 316-319

MATERIALS SCIENCE FORUM ; 750

Erscheinungsdatum:

01.01.2013

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Coˆrtes, A. D. S. / Silva, D. S. / Viana, G. A. et al. | American Institute of Physics | 2013

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Martorano, M. A. / Neto, J. B. / Oliveira, T. S. et al. | British Library Online Contents | 2011

Eutectic formation during directional solidification: Effect of the withdrawal rate

Yuan, S. / Jia, L. / Ma, L. et al. | British Library Online Contents | 2013

Resistivity Distribution Characteristics of Metallurgical Silicon Ingot after Directional Solidification

Shi, S. / Dong, W. / Sun, S.H. et al. | British Library Online Contents | 2011

Radial p-n junction macroporous silicon solar cell on p-type upgraded metallurgical-grade silicon substrate

Zhao, L. / Li, Z. C. / Diao, H. W. et al. | American Institute of Physics | 2012

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