Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering: Fid-Bau Portal

Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering

Akazawa, H. / Ueno, Y.

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Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering

Akazawa, H. / Ueno, Y.

Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering

Akazawa, H. / Ueno, Y.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Growth of preferentially c-axis oriented hydroxyapatite thin films on Si(100) substrate by electron-cyclotron-resonance plasma sputtering

Beteiligte:

Akazawa, H. (Autor:in) / Ueno, Y. (Autor:in)

Erschienen in:

APPLIED SURFACE SCIENCE ; 276 ; 217-222

Erscheinungsdatum:

01.01.2013

Format / Umfang:

6 pages

ISSN:

0169-4332

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.35

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