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Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications
Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications
Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications
Wolkenberg, A. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 18 ; 165-170
01.01.2014
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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