Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
Resistive switching characteristics of ferroelectric BiFeO3 nanodot prepared by dip-pen nanolithography
Kim, W. H. (Autor:in) / Son, J. Y. (Autor:in)
MATERIALS LETTERS ; 121 ; 122-125
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Large Resistive Switching in Ferroelectric BiFeO3 Nano-Island Based Switchable Diodes
British Library Online Contents | 2013
|British Library Online Contents | 2011
|Transport properties of Ar^+ irradiated resistive switching BiFeO3 thin films
British Library Online Contents | 2015
|Overhanging ferroelectric nanodot arrays created by high surface energy seeds
British Library Online Contents | 2014
|Overhanging ferroelectric nanodot arrays created by high surface energy seeds
British Library Online Contents | 2014
|