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Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography
Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography
Nanoscale resistive random access memory consisting of a NiO nanodot and Au nanowires formed by dip-pen nanolithography
Son, J. Y. (Autor:in) / Shin, Y. S. (Autor:in) / Shin, Y. H. (Autor:in)
APPLIED SURFACE SCIENCE ; 257 ; 9885-9887
01.01.2011
3 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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