Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging: Fid-Bau Portal

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

Konishi, K. / Yamamoto, S. / Nakata, S. / Toyoda, Y. / Yamakawa, S.

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Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

Konishi, K. / Yamamoto, S. / Nakata, S. / Toyoda, Y. / Yamakawa, S.

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

Konishi, K. / Yamamoto, S. / Nakata, S. / Toyoda, Y. / Yamakawa, S.

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Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

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Ähnliche Titel

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Titel:

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

Beteiligte:

Konishi, K. (Autor:in) / Yamamoto, S. (Autor:in) / Nakata, S. (Autor:in) / Toyoda, Y. (Autor:in) / Yamakawa, S. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

Erschienen in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 342-345

MATERIALS SCIENCE FORUM ; 778/780

Erscheinungsdatum:

01.01.2014

Format / Umfang:

4 pages

ISSN:

0255-5476

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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