Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
Sugie, R. (Autor:in) / Yoshikawa, M. (Autor:in) / Harada, S. (Autor:in) / Namikawa, Y. (Autor:in)
MATERIALS SCIENCE FORUM ; 600/603 ; 353-356
01.01.2009
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Synthesis of InP semiconductor nanowires containing stacking faults structure
British Library Online Contents | 2013
|British Library Online Contents | 1993
|British Library Online Contents | 2011
|Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC
British Library Online Contents | 2002
|Propagation of Stacking Faults in 3C-SiC
British Library Online Contents | 2011
|