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Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode
Huang, R.H. (Autor:in) / Chen, G. (Autor:in) / Bai, S. (Autor:in) / Li, R. (Autor:in) / Li, Y. (Autor:in) / Tao, Y.H. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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