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    Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

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    Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

    New search for: Huang, R.H.
    New search for: Chen, G.
    New search for: Bai, S.
    New search for: Li, R.
    New search for: Li, Y.
    New search for: Tao, Y.H.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

    New search for: Huang, R.H.
    New search for: Chen, G.
    New search for: Bai, S.
    New search for: Li, R.
    New search for: Li, Y.
    New search for: Tao, Y.H.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Title:

    Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

    Contributors:

    Huang, R.H. (author) / Chen, G. (author) / Bai, S. (author) / Li, R. (author) / Li, Y. (author) / Tao, Y.H. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 800-803

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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