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3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
Takatsuka, A. (Autor:in) / Tanaka, Y. (Autor:in) / Yano, K. (Autor:in) / Matsumoto, N. (Autor:in) / Yatsuo, T. (Autor:in) / Arai, K. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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