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    3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

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    3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

    New search for: Takatsuka, A.
    New search for: Tanaka, Y.
    New search for: Yano, K.
    New search for: Matsumoto, N.
    New search for: Yatsuo, T.
    New search for: Arai, K.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

    New search for: Takatsuka, A.
    New search for: Tanaka, Y.
    New search for: Yano, K.
    New search for: Matsumoto, N.
    New search for: Yatsuo, T.
    New search for: Arai, K.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Document information
    Title:

    3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)

    Contributors:

    Takatsuka, A. (author) / Tanaka, Y. (author) / Yano, K. (author) / Matsumoto, N. (author) / Yatsuo, T. (author) / Arai, K. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 899-902

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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