Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Stability of Current Gain in SiC BJTs
Stability of Current Gain in SiC BJTs
Stability of Current Gain in SiC BJTs
Buono, B. (Autor:in) / Allerstam, F. (Autor:in) / Domeij, M. (Autor:in) / Konstantinov, A. (Autor:in) / Gumaelius, K. (Autor:in) / Das, H. (Autor:in) / Neyer, T. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T.
Silicon Carbide and Related Materials 2013 ; 1017-1020
MATERIALS SCIENCE FORUM ; 778/780
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Current Gain Degradation in 4H-SiC Power BJTs
British Library Online Contents | 2011
|Current Gain Dependence on Emitter Width in 4H-SiC BJTs
British Library Online Contents | 2006
|Investigation of Current Gain Degradation in 4H-SiC Power BJTs
British Library Online Contents | 2012
|4H-SiC Power BJTs with High Current Gain and Low On-Resistance
British Library Online Contents | 2007
|Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs
British Library Online Contents | 2004
|