Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Domeij, M. (Autor:in) / Lee, H. S. (Autor:in) / Zetterling, C. M. (Autor:in) / Ostling, M. (Autor:in) / Schoner, A. (Autor:in) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
Silicon Carbide and Related Materials - 2005 ; 1425-1428
MATERIALS SCIENCE FORUM ; 527/529
01.01.2006
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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