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Process limitation for p-type CuSbS"2 semiconductor with high electrical mobility of 20cm^2V^-^1s^-^1
Process limitation for p-type CuSbS"2 semiconductor with high electrical mobility of 20cm^2V^-^1s^-^1
Process limitation for p-type CuSbS"2 semiconductor with high electrical mobility of 20cm^2V^-^1s^-^1
Wubet, W. (Autor:in) / Kuo, D. H. (Autor:in)
MATERIALS RESEARCH BULLETIN ; 53 ; 290-294
01.01.2014
5 pages
Aufsatz (Zeitschrift)
Englisch
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Process limitation for p-type CuSbS2 semiconductor with high electrical mobility of 20cm2V−1s−1
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