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Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Angermann, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 312 ; 3-16
01.01.2014
14 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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