A platform for research: civil engineering, architecture and urbanism
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements
Angermann, H. (author)
APPLIED SURFACE SCIENCE ; 312 ; 3-16
2014-01-01
14 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2014
|Interactions at tetraphenyl-porphyrin/InP interfaces observed by surface photovoltage spectroscopy
British Library Online Contents | 2008
|Non-Contact Photovoltage Measurements in SiC
British Library Online Contents | 2000
|British Library Online Contents | 2004
|Surface photovoltage in silicon. Novel applications for chemical and biological sensing
British Library Online Contents | 2005
|