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High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
High temperature thermal stability investigations of ammonium sulphide passivated InGaAs and interface formation with Al2O3 studied by synchrotron radiation based photoemission
Chauhan, L. (Autor:in) / Gajula, D. R. (Autor:in) / McNeill, D. (Autor:in) / Hughes, G. (Autor:in)
APPLIED SURFACE SCIENCE ; 317 ; 696-700
01.01.2014
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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