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The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics
Kim, J. (Autor:in) / Jang, J. (Autor:in) / Kim, K. (Autor:in) / Kim, H. (Autor:in) / Kim, S. H. (Autor:in) / Park, C. E. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 7241-7246
01.01.2014
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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