Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Direct Bandgap Transition in Many-Layer MoS2 by Plasma-Induced Layer Decoupling
Direct Bandgap Transition in Many-Layer MoS2 by Plasma-Induced Layer Decoupling
Direct Bandgap Transition in Many-Layer MoS2 by Plasma-Induced Layer Decoupling
Dhall, R. (Autor:in) / Neupane, M. R. (Autor:in) / Wickramaratne, D. (Autor:in) / Mecklenburg, M. (Autor:in) / Li, Z. (Autor:in) / Moore, C. (Autor:in) / Lake, R. K. (Autor:in) / Cronin, S. (Autor:in)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 27 ; 1573-1578
01.01.2015
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Tensile loading induced phase transition and rippling in single-layer MoS2
British Library Online Contents | 2017
|Tensile loading induced phase transition and rippling in single-layer MoS2
British Library Online Contents | 2017
|Single-Layer MoS2 Mechanical Resonators
British Library Online Contents | 2013
|Broadband Few-Layer MoS2 Saturable Absorbers
British Library Online Contents | 2014
|Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
British Library Online Contents | 2016
|