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Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Silva, A. G. (Autor:in) / Pedersen, K. (Autor:in) / Li, Z. S. (Autor:in) / Morgen, P. (Autor:in)
APPLIED SURFACE SCIENCE ; 353 ; 1208-1213
01.01.2015
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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