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Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Photoelectron spectroscopy as an in situ contact-less method for studies of MOS properties of ultrathin oxides on Si
Silva, A. G. (author) / Pedersen, K. (author) / Li, Z. S. (author) / Morgen, P. (author)
APPLIED SURFACE SCIENCE ; 353 ; 1208-1213
2015-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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