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Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer
Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer
Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer
Yuan, X. C. (Autor:in) / Wei, X. H. (Autor:in) / Dai, B. (Autor:in) / Zeng, H. Z. (Autor:in)
APPLIED SURFACE SCIENCE ; 362 ; 506-511
01.01.2016
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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