Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    New search for: Yuan, X. C.
    New search for: Wei, X. H.
    New search for: Dai, B.
    New search for: Zeng, H. Z.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    New search for: Yuan, X. C.
    New search for: Wei, X. H.
    New search for: Dai, B.
    New search for: Zeng, H. Z.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    New search for: Yuan, X. C.
    New search for: Wei, X. H.
    New search for: Dai, B.
    New search for: Zeng, H. Z.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    Contributors:

    Yuan, X. C. (author) / Wei, X. H. (author) / Dai, B. (author) / Zeng, H. Z. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 362 ; 506-511

    Publication date:

    2016-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    Yuan, Xin-Cai / Wei, Xian-Hua / Dai, Bo et al. | British Library Online Contents | 2016

    Nonlinear switching in Al/Li:NiO/ITO forming-free resistive memories caused by interfacial layer

    Yuan, Xin-Cai / Wei, Xian-Hua / Dai, Bo et al. | British Library Online Contents | 2016

    Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)

    Zhu, X. / Su, W. / Liu, Y. et al. | British Library Online Contents | 2012

    Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

    Waser, R. / Dittmann, R. / Staikov, G. et al. | British Library Online Contents | 2009

    Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

    Pan, F. / Gao, S. / Chen, C. et al. | British Library Online Contents | 2014

    Back to top