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Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure
Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure
Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure
Saghrouni, H. (Autor:in) / Jomni, S. (Autor:in) / Belgacem, W. (Autor:in) / Elghoul, N. (Autor:in) / Beji, L. (Autor:in)
Materials science in semiconductor processing ; 29 ; 307-314
01.01.2015
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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