Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283

Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

Lin, Tao / Sun, Ruijuan / Sun, Hang / Guo, Enmin / Duan, Yupeng / Lin, Nan / Ma, Xiaoyu / Wang, Yonggang

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Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

Lin, Tao / Sun, Ruijuan / Sun, Hang / Guo, Enmin / Duan, Yupeng / Lin, Nan / Ma, Xiaoyu / Wang, Yonggang

Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

Lin, Tao / Sun, Ruijuan / Sun, Hang / Guo, Enmin / Duan, Yupeng / Lin, Nan / Ma, Xiaoyu / Wang, Yonggang

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Zugriff über TIB

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Titel:

Corrigendum to ‘Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate’ [Mater. Sci. Semicond. Process. 42 (2016) 283–287]

Beteiligte:

Lin, Tao (Autor:in) / Sun, Ruijuan (Autor:in) / Sun, Hang (Autor:in) / Guo, Enmin (Autor:in) / Duan, Yupeng (Autor:in) / Lin, Nan (Autor:in) / Ma, Xiaoyu (Autor:in) / Wang, Yonggang (Autor:in)

Erschienen in:

Materials science in semiconductor processing ; 47 ; 86

Erscheinungsdatum:

01.01.2016

Format / Umfang:

86 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

Lin, Tao / Sun, Ruijuan / Sun, Hang et al. | British Library Online Contents | 2016

Corrigendum to “Synthesis, growth and characterization of AgInSe2 single crystals” [Mater. Sci. Semicond. Process. 40 (2015) 591–595]

Karunagaran, N. / Ramasamy, P. | British Library Online Contents | 2016

Corrigendum to “Bulk moduli of PbSxSe1−x, PbSxTe1−x and PbSexTe1−x from a thermodynamical model compared to generalized gradient approximation approach” [Mater. Sci. Semicond. Process. 43 (2016) 65–68]

Skordas, E.S. | British Library Online Contents | 2016

Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

Zhang, X. / Briot, O. / Gil, B. et al. | British Library Online Contents | 1995

MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate

Cordier, Y. / Bollaert, S. / DiPersio, J. et al. | British Library Online Contents | 1998

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